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| ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC(cont) = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m PD = 3.0W Complementary part number ZXTN19060CG Description Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. C B Features * * * * High Gain Low saturation voltage High peak current 7V reverse blocking voltage E Applications * * * High side driver Motor drive Load disconnect switch E C C B Tape width (mm) 12 Quantity per reel 1000 Ordering information Device ZXTP19060CGTA Reel size (inches) 7 Pinout - top view Device marking ZXTP19060C Issue 1- February 2008 (c) Zetex Semiconductors plc 2008 1 www.zetex.com ZXTP19060CG Absolute maximum ratings Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Collector voltage (reverse blocking) Emitter-Base voltage Continuous Collector current(c) Base current Peak pulse current Power dissipation at TA =25C(a) Linear derating factor Power dissipation at TA =25C(b) Linear derating factor Power dissipation at TA =25C(c) Linear derating factor Power dissipation at TA =25C(d) Linear derating factor Power dissipation at TC =25C(e) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD PD Symbol VCBO VCEO VECX VEBO IC IB ICM PD Limit -60 -60 -7 -7 -5 -1 -7 1.2 9.6 1.6 12.8 3.0 24 5.3 42 10.2 81 -55 to 150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Junction to case(e) Symbol R R R R R JA JA JA JA JC Limit 104 78 42 23.5 12.3 Unit C/W C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1- February 2008 (c) Zetex Semiconductors plc 2008 2 www.zetex.com ZXTP19060CG Thermal characteristics Max Power Dissipation (W) Collector Current (A) 10 V CE(sat) 3.0 See note (c) Limit 2.5 1 DC 1s 100ms 2.0 See note (b) 1.5 100m 10ms 1.0 See note (a) 1ms 100s Single Pulse. T -I C amb =25C 0.5 10m 100m See note (c) 0.0 0 20 40 60 80 100 120 140 160 1 CE 10 -V Collector-Emitter Voltage (V) Temperature (C) Safe Operating Area Derating Curve Thermal Resistance (C/W) 40 See note (c) Max Power Dissipation (W) Single Pulse. T 100 amb =25C See note (c) 30 D=0.5 20 10 D=0.2 Single Pulse 10 D=0.05 D=0.1 0 100 1m 10m 100m 1 10 100 1k 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation Issue 1- February 2008 (c) Zetex Semiconductors plc 2008 3 www.zetex.com ZXTP19060CG Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current Emitter cut-off current Collector-Emitter saturation voltage Symbol BVCBO BVCEO BVECX BVECO BVEBO ICBO IEBO VCE(sat) Min. -60 -260 -7 -7 -7 Typ. -110 -90 -8.4 -8.8 -8.4 <1 <1 -62 -145 -500 -105 -145 -300 -975 -890 200 160 20 330 260 40 180 280 29.5 24.3 13.2 456 68.2 400 40 -50 -0.5 -50 -80 -205 -750 -165 -200 -500 -1050 -1000 500 Max. Unit V V V V V nA A nA mV mV mV mV mV mV mV mV Conditions IC = -100A IC= -10mA (*) IE = -100A, RBC < 1k or 0.25V > VBC > -0.25V IE = -100A IE = -100A VCB = -60V VCB = -60V, Tamb=100C VEB = -5.6V IC = -1A, IB = -100mA(*) IC = -1A, IB = -20mA(*) IC = -2A, IB = -40mA(*) IC = -2A, IB = -200mA(*) IC = -3A, IB = -300mA(*) IC = -5A, IB = -500mA(*) IC = -5A, IB = -500mA(*) IC = -5A, VCE = -2V(*) IC = -100mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -5A, VCE = -2V(*) MHz pF pF ns ns ns ns IC = -500mA, VCC = -10V, IB1 = -IB2 = -50mA IC = -50mA, VCE = -10V f = 50MHz VEB = -0.5V, f = 1MHz(*) VCB = -10V, f = 1MHz(*) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE Transition frequency Input capacitance Output capacitance Delay time Rise time Storage time Fall time fT Cibo Cobo td tr ts tf NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. Issue 1- February 2008 (c) Zetex Semiconductors plc 2008 4 www.zetex.com ZXTP19060CG Typical characteristics 1 Tamb=25C I /I =100 C B 0.3 I /I =10 C B (V) CE(SAT) CE(SAT) 100m I /I =50 C B (V) 0.2 150C -V I /I =20 C B -V 0.1 100C 25C 10m 1m 10m 100m I /I =10 C B -55C 0.0 1 10 10m 100m 1 10 -I C Collector Current (A) CE(SAT) -I C Collector Current (A) CE(SAT) V vI C V vI C 1.2 1.6 150C V CE =2V 600 I /I =10 C B Normalised Gain Typical Gain (hFE ) 1.4 1.2 100C 500 1.0 -55C 25C 400 (V) BE(SAT) 1.0 0.8 0.6 0.4 0.2 0.0 1m 0.8 25C 300 0.6 150C -V -55C 200 100 0.4 100C 0 0.2 1m 10m 100m 1 10 10m 100m 1 10 -I C Collector Current (A) -I C Collector Current (A) h FE vI C V BE(SAT) vI C 400 1.0 V =2V 25C CE 350 Cibo f = 1MHz Capacitance (pF) -55C 300 250 200 150 100 50 0 Cobo BE(ON) (V) -V 0.8 0.6 0.4 100C 150C 0.2 1m 10m 100m 1 10 10m 100m 1 10 -I C Collector Current (A) BE(ON) - Voltage(V) V vI C Capacitance v Voltage Issue 1- February 2008 (c) Zetex Semiconductors plc 2008 5 www.zetex.com ZXTP19060CG Package outline - SOT223 Dim. A A1 A2 b b2 C Millimeters Min. 0.02 1.55 0.66 2.90 0.23 Max. 1.80 0.10 1.65 0.84 3.10 0.33 - Inches Min. 0.0008 0.0610 0.026 0.114 0.009 Max. 0.071 0.004 0.0649 0.033 0.122 0.013 Dim. D e e1 E E1 L Millimeters Min. 6.30 Max. 6.70 Inches Min. 0.248 Max. 0.264 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 - 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1- February 2008 (c) Zetex Semiconductors plc 2008 6 www.zetex.com ZXTP19060CG Intentionally left blank Issue 1- February 2008 (c) Zetex Semiconductors plc 2008 7 www.zetex.com ZXTP19060CG Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com (c) 2008 Published by Zetex Semiconductors plc Issue 1- February 2008 (c) Zetex Semiconductors plc 2008 8 www.zetex.com |
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